Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

Brand

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

60 V

Package Type

V-DFN3030

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3.05mm

Typical Gate Charge @ Vgs

13.9 nC @ 10V

Width

3.05mm

Number of Elements per Chip

2

Height

0.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China