Diodes Inc N-Channel MOSFET, 320 mA, 100 V, 3-Pin E-Line ZVN2110ASTZ

RS Stock No.: 669-7603PBrand: DiodesZetexManufacturers Part No.: ZVN2110ASTZ
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

P.O.A.

Each (Supplied as a Tape) (ex VAT)

Diodes Inc N-Channel MOSFET, 320 mA, 100 V, 3-Pin E-Line ZVN2110ASTZ
Select packaging type

P.O.A.

Each (Supplied as a Tape) (ex VAT)

Diodes Inc N-Channel MOSFET, 320 mA, 100 V, 3-Pin E-Line ZVN2110ASTZ

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.