P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Product details
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
Production pack (Tape)
25
P.O.A.
Production pack (Tape)
25
Buy in bulk
| quantity | Unit price |
|---|---|
| 25 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250 - 495 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Product details