N-Channel MOSFET Transistor, 7.6 A, 200 V, 3-Pin D-PAK Fairchild FQD10N20LTF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
200 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.1mm
Minimum Operating Temperature
-55 °C
Height
2.3mm
P.O.A.
5
P.O.A.
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 20 | P.O.A. |
| 25 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250 - 495 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
200 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.1mm
Minimum Operating Temperature
-55 °C
Height
2.3mm