Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
51 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Width
4.7mm
Series
QFET
Minimum Operating Temperature
-55 °C
Height
15.87mm
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
51 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Width
4.7mm
Series
QFET
Minimum Operating Temperature
-55 °C
Height
15.87mm