Infineon N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2

RS Stock No.: 752-7773PBrand: InfineonManufacturers Part No.: 2N7002H6327XTSA2
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2
Select packaging type

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.