N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1

RS Stock No.: 214-8966Brand: InfineonManufacturers Part No.: BSB104N08NP3GXUSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™

Package Type

MG-WDSON-2

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1

5000

Available in multiples of 1
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Stock information temporarily unavailable.

5000

Available in multiples of 1
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™

Package Type

MG-WDSON-2

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si