Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1

RS Stock No.: 133-9881Brand: InfineonManufacturers Part No.: BSC009NE2LS5IATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS™ 5

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+16 V

Number of Elements per Chip

1

Width

6.35mm

Length

5.49mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.62V

Height

1.1mm

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

P.O.A.

Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS™ 5

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+16 V

Number of Elements per Chip

1

Width

6.35mm

Length

5.49mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.62V

Height

1.1mm

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.