Dual N-Channel MOSFET Transistor & Diode, 205 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSTATMA1

RS Stock No.: 220-7349Brand: InfineonManufacturers Part No.: BSC014N04LSTATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

205 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

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P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 205 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSTATMA1

5000

Available in multiples of 1
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 205 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSTATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 1
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

205 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2