Dual N-Channel MOSFET, 13 A, 100 V, 8-Pin TDSON Infineon BSC750N10NDGATMA1

RS Stock No.: 911-0793Brand: InfineonManufacturers Part No.: BSC750N10NDGATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

26 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.9mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.15mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1mm

Series

OptiMOS 2

Country of Origin

Singapore

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Dual N-Channel MOSFET, 13 A, 100 V, 8-Pin TDSON Infineon BSC750N10NDGATMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 13 A, 100 V, 8-Pin TDSON Infineon BSC750N10NDGATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

26 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.9mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.15mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1mm

Series

OptiMOS 2

Country of Origin

Singapore

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.