Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1

RS Stock No.: 215-2466Brand: InfineonManufacturers Part No.: BSG0811NDATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

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P.O.A.

Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si