N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1

RS Stock No.: 445-2269PBrand: InfineonManufacturers Part No.: BSP295
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

3.5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
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Production pack (Reel)

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Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Buy in bulk

quantityUnit price
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

3.5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.