Infineon N-Channel MOSFET, 1.5 A, 20 V, 3-Pin SOT-323 BSS214NWH6327XTSA1

RS Stock No.: 827-0030Brand: InfineonManufacturers Part No.: BSS214NWH6327XTSA1Distrelec Article No.: 30341194
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

20 V

Series

OptiMOS™

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon N-Channel MOSFET, 1.5 A, 20 V, 3-Pin SOT-323 BSS214NWH6327XTSA1

1

Available in multiples of 250
1P.O.A.
251P.O.A.
501P.O.A.
751P.O.A.
1001P.O.A.
1251P.O.A.
1501P.O.A.
1751P.O.A.
2001P.O.A.
2251P.O.A.
2501P.O.A.
2751P.O.A.
3001P.O.A.
3251P.O.A.
3501P.O.A.

P.O.A.

Infineon N-Channel MOSFET, 1.5 A, 20 V, 3-Pin SOT-323 BSS214NWH6327XTSA1
Stock information temporarily unavailable.

1

Available in multiples of 250
1P.O.A.
251P.O.A.
501P.O.A.
751P.O.A.
1001P.O.A.
1251P.O.A.
1501P.O.A.
1751P.O.A.
2001P.O.A.
2251P.O.A.
2501P.O.A.
2751P.O.A.
3001P.O.A.
3251P.O.A.
3501P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

20 V

Series

OptiMOS™

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.