Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0909NDXTMA1

RS Stock No.: 222-4631Brand: InfineonManufacturers Part No.: BSZ0909NDXTMA1
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Series

OptiMOSTM3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.018 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0909NDXTMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0909NDXTMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Series

OptiMOSTM3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.018 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon