Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1

RS Stock No.: 214-8987Brand: InfineonManufacturers Part No.: BSZ16DN25NS3GATMA1
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 5000) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1

P.O.A.

Each (On a Reel of 5000) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1