N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 Infineon BSZ16DN25NS3GATMA1

RS Stock No.: 214-8987Brand: InfineonManufacturers Part No.: BSZ16DN25NS3GATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Series

OptiMOS 3

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P.O.A.

N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 Infineon BSZ16DN25NS3GATMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 Infineon BSZ16DN25NS3GATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Series

OptiMOS 3