3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1

RS Stock No.: 284-808Brand: InfineonManufacturers Part No.: DF11MR12W1M1HFB67BPSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

3

Transistor Material

SiC

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P.O.A.

3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1

24

Available in multiples of 1
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

P.O.A.

3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1
Stock information temporarily unavailable.

24

Available in multiples of 1
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

3

Transistor Material

SiC