Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

RS Stock No.: 277-194Brand: InfineonManufacturers Part No.: FF2000UXTR33T2M1BPSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany

Stock information temporarily unavailable.

P.O.A.

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany