Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1

RS Stock No.: 220-7366Brand: InfineonManufacturers Part No.: IAUT200N08S5N023ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

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P.O.A.

Each (In a Pack of 2) (ex VAT)

Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
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Standard

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Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (In a Pack of 2) (ex VAT)

Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1