Infineon IMW1 N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1

RS Stock No.: 222-4859Brand: InfineonManufacturers Part No.: IMW120R350M1HXKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Series

IMW1

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1

P.O.A.

Each (In a Tube of 30) (ex VAT)

Infineon IMW1 N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

Each (In a Tube of 30) (ex VAT)

Infineon IMW1 N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1

Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Series

IMW1

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1