Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia
P.O.A.
Production pack (Tube)
1
P.O.A.
Production pack (Tube)
1
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia