Infineon SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14 IMYH200R024M1HXKSA1

RS Stock No.: 284-864PBrand: InfineonManufacturers Part No.: IMYH200R024M1HXKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

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P.O.A.

Infineon SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14 IMYH200R024M1HXKSA1
Select packaging type

P.O.A.

Infineon SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14 IMYH200R024M1HXKSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia