Infineon N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

RS Stock No.: 145-9340Brand: InfineonManufacturers Part No.: IPA105N15N3GXKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™ 3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

40.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.85mm

Length

10.65mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Country of Origin

Malaysia

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Infineon N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

P.O.A.

Infineon N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™ 3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

40.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.85mm

Length

10.65mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Country of Origin

Malaysia

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.