Infineon N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
188 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
188 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.