Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1

RS Stock No.: 220-7373Brand: InfineonManufacturers Part No.: IPB015N04NGATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0015 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

P.O.A.

Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1

P.O.A.

Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0015 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1