N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK Infineon IPB120N08S403ATMA1

RS Stock No.: 214-4365Brand: InfineonManufacturers Part No.: IPB120N08S403ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK Infineon IPB120N08S403ATMA1

1000

Available in multiples of 1
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK Infineon IPB120N08S403ATMA1
Stock information temporarily unavailable.

1000

Available in multiples of 1
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1