Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1

RS Stock No.: 754-5443Brand: InfineonManufacturers Part No.: IPB200N15N3GATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P.O.A.

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

P.O.A.

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.