N-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Series
OptiMOS T2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
4.572mm
Product details
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Series
OptiMOS T2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
4.572mm
Product details
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.