Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1

RS Stock No.: 215-2505Brand: InfineonManufacturers Part No.: IPD33CN10NGATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

P.O.A.

Each (On a Reel of 2500) (ex VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1

P.O.A.

Each (On a Reel of 2500) (ex VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si