Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2

RS Stock No.: 222-4666PBrand: InfineonManufacturers Part No.: IPD50N06S4L08ATMA2
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0078 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Silicon

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0078 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Silicon