Infineon CoolMOS™ CE N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK IPD50R2K0CEAUMA1

RS Stock No.: 214-4379Brand: InfineonManufacturers Part No.: IPD50R2K0CEAUMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

P.O.A.

Each (In a Pack of 50) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK IPD50R2K0CEAUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (In a Pack of 50) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK IPD50R2K0CEAUMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1