N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

RS Stock No.: 130-0902Brand: InfineonManufacturers Part No.: IPD60R800CEAUMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

74 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

17.2 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1
Select packaging type

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

74 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

17.2 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.