N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

RS Stock No.: 215-2517Brand: InfineonManufacturers Part No.: IPD80R900P7ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

2500

Available in multiples of 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

P.O.A.

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1
Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si