Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S4L04ATMA1

RS Stock No.: 229-1837Brand: InfineonManufacturers Part No.: IPD90N04S4L04ATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0038 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon

P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S4L04ATMA1
Select packaging type

P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S4L04ATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0038 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon