Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1

RS Stock No.: 262-5868Brand: InfineonManufacturers Part No.: IPF009N04NF2SATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

302 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

P.O.A.

Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1
Stock information temporarily unavailable.

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

302 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC