Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

RS Stock No.: 223-8519Brand: InfineonManufacturers Part No.: IPG20N06S2L65AATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 5000) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Each (On a Reel of 5000) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si