Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1

RS Stock No.: 223-8523Brand: InfineonManufacturers Part No.: IPG20N06S4L26AATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

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P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1
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P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2