N-Channel MOSFET, 11 A, 900 V, 3-Pin I2PAK Infineon IPI90R500C3XKSA1

RS Stock No.: 897-7557PBrand: InfineonManufacturers Part No.: IPI90R500C3XKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.2mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

4.5mm

Transistor Material

Si

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.45mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 11 A, 900 V, 3-Pin I2PAK Infineon IPI90R500C3XKSA1
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Production pack (Tube)

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Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

N-Channel MOSFET, 11 A, 900 V, 3-Pin I2PAK Infineon IPI90R500C3XKSA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.2mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

4.5mm

Transistor Material

Si

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.45mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.