N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1

RS Stock No.: 220-7434Brand: InfineonManufacturers Part No.: IPL60R360P6SATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

ThinPAK 5 x 6

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.36 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Series

CoolMOS P6

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P.O.A.

N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

ThinPAK 5 x 6

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.36 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Series

CoolMOS P6