N-Channel MOSFET, 1.9 A, 800 V, 3-Pin SOT-223 Infineon IPN80R3K3P7ATMA1

RS Stock No.: 215-2531Brand: InfineonManufacturers Part No.: IPN80R3K3P7ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

N-Channel MOSFET, 1.9 A, 800 V, 3-Pin SOT-223 Infineon IPN80R3K3P7ATMA1

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 1.9 A, 800 V, 3-Pin SOT-223 Infineon IPN80R3K3P7ATMA1
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si