Infineon CoolMOS™ CFD7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1

RS Stock No.: 218-3067Brand: InfineonManufacturers Part No.: IPP60R125CFD7XKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CFD7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1

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P.O.A.

Each (In a Pack of 5) (ex VAT)

Infineon CoolMOS™ CFD7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1
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Standard

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Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Each (In a Pack of 5) (ex VAT)

Infineon CoolMOS™ CFD7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CFD7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1