Infineon SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

RS Stock No.: 284-900PBrand: InfineonManufacturers Part No.: IPT65R040CFD7XTMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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P.O.A.

Infineon SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Infineon SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC