N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1

RS Stock No.: 898-6952Brand: InfineonManufacturers Part No.: IPW65R041CFDFKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

21.1mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1
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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
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5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
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15P.O.A.

P.O.A.

N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

21.1mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.