P-channel MOSFET,IRF5210L 40A 100V
Technical documents
Specifications
Channel Type
P
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
100 V
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
150 nC @ 10 V
Height
10.54mm
Maximum Operating Temperature
+150 °C
Length
10.54mm
Width
4.69mm
Transistor Material
Si
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P.O.A.
Standard
1
P.O.A.
Standard
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 9 | P.O.A. |
| 10 - 49 | P.O.A. |
| 50 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Channel Type
P
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
100 V
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
150 nC @ 10 V
Height
10.54mm
Maximum Operating Temperature
+150 °C
Length
10.54mm
Width
4.69mm
Transistor Material
Si