Infineon N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC IRF6643TRPBF

RS Stock No.: 130-0946Brand: InfineonManufacturers Part No.: IRF6643TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

34.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.59mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC IRF6643TRPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

P.O.A.

Infineon N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC IRF6643TRPBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

34.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.59mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.