Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF

RS Stock No.: 220-7475Brand: InfineonManufacturers Part No.: IRF6715MTRPBF
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

25 V

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0013 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Series

HEXFET

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF

4800

Available in multiples of 4800
4800P.O.A.
9600P.O.A.
14400P.O.A.
19200P.O.A.
24000P.O.A.
28800P.O.A.
33600P.O.A.
38400P.O.A.
43200P.O.A.
48000P.O.A.
52800P.O.A.
57600P.O.A.
62400P.O.A.
67200P.O.A.
72000P.O.A.

P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF
Stock information temporarily unavailable.

4800

Available in multiples of 4800
4800P.O.A.
9600P.O.A.
14400P.O.A.
19200P.O.A.
24000P.O.A.
28800P.O.A.
33600P.O.A.
38400P.O.A.
43200P.O.A.
48000P.O.A.
52800P.O.A.
57600P.O.A.
62400P.O.A.
67200P.O.A.
72000P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

25 V

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0013 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Series

HEXFET