P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF

RS Stock No.: 650-4160Brand: InfineonManufacturers Part No.: IRF9520NSPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

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P.O.A.

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

quantityUnit price
5 - 20P.O.A.
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

You may be interested in