Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

RS Stock No.: 162-3296Brand: InfineonManufacturers Part No.: IRF9910TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Minimum Gate Threshold Voltage

1.65V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Height

1.5mm

Series

IRF9910

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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P.O.A.

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Minimum Gate Threshold Voltage

1.65V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Height

1.5mm

Series

IRF9910

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V