N-Channel MOSFET, 79 A, 30 V, 8-Pin PQFN 5 x 6 Infineon IRFH5304TRPBF

RS Stock No.: 130-0982Brand: InfineonManufacturers Part No.: IRFH5304TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

46 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

41 nC @ 15 V

Height

0.85mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P.O.A.

N-Channel MOSFET, 79 A, 30 V, 8-Pin PQFN 5 x 6 Infineon IRFH5304TRPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

P.O.A.

N-Channel MOSFET, 79 A, 30 V, 8-Pin PQFN 5 x 6 Infineon IRFH5304TRPBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

46 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

41 nC @ 15 V

Height

0.85mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.