Infineon N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF

RS Stock No.: 165-7765Brand: InfineonManufacturers Part No.: IRFML8244TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

25 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

5.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

Philippines

Product details

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

P.O.A.

Infineon N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF
Stock information temporarily unavailable.

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

25 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

5.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

Philippines

Product details

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.