N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF

RS Stock No.: 784-8950Brand: InfineonManufacturers Part No.: IRFR4510PBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET

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P.O.A.

N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

P.O.A.

N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET

You may be interested in